基于密度泛函理论结合跳跃模型和能带理论研究了氟、氯、氰基和N原子的引入对四硫富瓦烯(TTF)衍生物载流子传输性质的影响.计算结果表明,嵌N修饰会降低分子重组能,特别是当N原子靠近TTF主体环时作用更明显.与引入卤素修饰相比,引入氰基修饰的分子具有更小的电子和空穴重组能及更低的前线分子轨道(FMO)能级.同时迁移率的计算结果显示,分子6具有1.15 cm2·V-1·s-1的高电子迁移率,考虑其较低的LUMO能级,推测其有望成为潜在的优异电子传输材料,而相似的电子和空穴迁移率使分子2有望成为潜在的双极性传输材料.同时还考察了S和N原子之间的弱相互作用,当S或N原子对分子HOMO(或LUMO)有贡献时,其相应的空穴(或电子)传输能力会有所提高.
The density functional theory and hopping model with band theory were employed to calculate the charge carrier transport properties of six planar polycyclic aromatic hydrocarbon fused tetrathiafulvalene(TTF) derivatives. The effects of halogen, cyan substitutions and nitrogen were investigated in details. It was con-firmed that the introduction of N-atoms reduced the molecular reorganization energy especially when the N-atoms were modified next to the TTF core. Comparing to the halogen the cyan group modified molecules be-have lower reorganization energy and lower frontier energy level. The calculated electron drift mobility of mole-cule 6 is 1. 15 cm2 ·V-1 ·s-1 . More over the molecule maintains the lowest LUMO energy level, implying that the molecule may exhibit good electron transport property. The calculated electron dirft mobility(0. 37 cm2 ·V-1 ·s-1 ) of molecule 2 is very close to hole dirft mobility(0. 34 cm2 ·V-1 ·s-1 ), indicating molecule 2 is suitable for bi