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双语推荐:CCTO

文章研究了巨介电常数材料CaCu3Ti4O12(CCTO)在宽温区(-120℃~300℃)及宽频域(1 Hz~10 MHz)的交流电导及介电性能。在低温区和高温区,CCTO表现出两种不同的导电过程,均可以由Mott提出的可变程跳跃电导机制(Variable-Range-Hopping,VRH)来描述。研究发现高温VRH过程与氧空位的二次离子化相关,而低温过程符合普适介电响应方程,其介电弛豫行为起源于极化子的弛豫。
The ac conductivity and dielectric properties of CaCu3Ti4O12 (CCTO) ceramics were investigated in a temperature range of-120℃to 300℃and a frequency range of 1 Hz to 10 MHz. Two different conduction processes, which can be well described by Mott’s variable-range-hopping (VRH) mechanism, were observed in different temperature regions. The high temperature VRH conduction is related to the second ionization of oxygen vacancy. The low temperature dielectric properties of CCTO could be described by the so-called universal dielectric response (UDR) when a polaron relaxation is considered.

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以碳粉和蛋清作为造孔剂,利用固相法制备CaCu3Ti4O12(CCTO)多孔陶瓷.研究了造孔剂含量对CCTO多孔陶瓷体积密度、显微结构和介电性能的影响.结果表明,随着碳粉含量增加,体积密度先增加后减小;而随着蛋清含量增加,体积密度先减小后增加.和碳粉相比,蛋清加入制备的试样具有较小、较均匀的孔隙.当频率大于331.5KHz时,添加碳粉可以降低介电损耗.当频率大于4KHz时,添加碳粉介电常数有所下降.当频率大于2KHz时,添加蛋清可以增大介电损耗,但是增加幅度较小.添加蛋清可以增大介电常数.
CaCu3 Ti4 O12 (CCTO) porous ceramics were prepared by solid phase method using carbon powder and egg white as pore forming agents .It was studied that the contents of pore former effected on the volume density ,microstructures and dielectric properties for CCTO porous ceramics .The results show that with the increase of the contents of carbon powders volume density increases firstly and then decreases .How ever ,density decreases firstly and then increases with the increase of quantity of egg white .The samples with egg white possess the smaller and more uniform pores contrast to the sample containing carbon powders . Adding carbon powders can reduce the dielectric loss when the frequency is greater than 331 . 5 KHz .Dielectric constant decreases while adding carbon powders after 4 KHz .The dielectric loss increases with adjunction of egg white as the frequency is greater than 2 KHz but increa‐ses smally .T he dielectric constant increases w hile ow ning egg w hite .

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由于CaCu3Ti4O12巨介电常数陶瓷的低频区直流电导较大,本文采用模量M′-f 频谱表征与分析了低频和高频的两个松弛极化过程.研究认为,这两个特征峰属于晶界区Schottky势垒耗尽层边缘深陷阱的电子松弛过程,其中高频松弛峰起源于晶粒本征缺陷的电子松弛过程,而低频松弛峰则为与氧空位有关的松弛极化过程.对于CaCu3Ti4O12这类低频下具有高直流电导的陶瓷材料,采用模量频谱能更有效地分析研究其损耗极化机理.
@@@@The DC conductivity of the CaCu3Ti4O12 ceramic is considerable at low frequency. The dielectric properties of the CaCu3Ti4O12 ceramics are analyzed by dielectric spectrum, and the two relaxation processes are characterized by the dielectric modulus. The two relaxation processes are considered which are dominated by the electronic relaxation of deep bulk traps at the depletion layer edge. The low-frequency and high-frequency relaxation processes are attributed to oxygen-vacancy-related defect and native defect, respectively. It is proved that the modulus response of the CaCu3Ti4O12 ceramic is equivalent to conductivity response at high temperature (low frequency), and the peak value of the M′ is inversely proportional to capacitance. The activation energies calculated by conductivity and modulus are equivalent to each other. The modulus spectrum is more effective to the material which has high DC conductivity at low frequency such as CCTO ceramic.

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