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双语推荐:电子能量损失

在前期计算电子能量分布函数的基础上,求出弱电离大气等离子体中各碰撞反应过程的电子能量损失.由于在弹性碰撞中电子-重粒子能量交换很少,同时氮气、氧气分子又有很多能量阈值较低的转动、振动能级存在,因此在大气等离子体中弹性碰撞电子能量损失所占份额很小(直流电场下小于6%).研究发现,弱电离大气等离子体中在不同能量区间占主导的能量损失过程不同.随着有效电子温度(或约化场强)增加,占主导的电子能量损失过程依次为转动激发、振动激发、电子态激发、碰撞电离、加速电离产生的二次电子.在约化场强E/N=1350 Td (或有效电子温度为14 eV)附近,平均电离一个电子所需的能量最小,约为57 eV.因此可以根据不同的需求调节电场强度,从而达到较高的能量利用率.
The energy loss induced by electron collisions in weakly ionized air plasma is calculated based on the electron energy dis-tribution function that we obtained. Since there are a lot of low-energy-threshold molecular rotation and vibration excitations and the electron-molecule energy transfer is inefficient in elastic collision, the fraction of energy loss for electron elastic collision (less than 6%) is negligible. Among different collision processes the electron energy loss is dominant in different energy regions. As the effective electron temperature (or the reduced electric field) increases, the dominant energy loss process becomes sequentially rota-tional excitation, vibrational excitation, electronic excitation, collisional ionization, and accelerating ionized electrons. When E/N=1350 Td (or Te =14 eV), the average energy loss per ion-electron pair reaches a minimum value of 57 eV. By controlling the electric field according to the requirement in applications, we can control the e

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基于高入射能量电子产生二次电子发射的物理过程,分别对高入射能量电子产生的真二次电子和背散射电子的概率进行理论分析与建模.利用Bethe能量损失模型和内二次电子逸出概率分布,推导出高入射能量电子产生有效真二次电子发射的系数与入射能量的关系式;根据高入射能量电子在材料内部被吸收的规律,推导出高入射能量电子产生背散射电子的系数与入射能量之间的关系式.结合两者得到高入射能量下金属的二次电子发射模型.利用该模型计算得到典型金属材料Au, Ag, Cu, Al的二次电子发射系数,理论计算结果与采用Casino软件模拟金属内部散射过程得到的数值模拟结果相符.
@@@@The models of the true secondary electron emission and backscattered electron emission for metal are provided, based on the physical process of secondary electron emission from metal at high incident electron energy. The formula for the true secondary electron yield at high incident electron energy is derived with the Bethe equation known to provide accurate and simple analytical expressions for the stopping power and the probability that a secondary electron produced in a material reaches the surface and is emitted into the vacuum. The formula for the backscattered electron yield at high incident electron energy is derived with the absorbing rule for the incident electron in the material. All the above results lead to a new model for secondary electron emission from metal at high incident electron energy. The secondary electron yields of Au, Ag, Cu and Al derived with the new model are in good agreement with the results obtained from the scatters process simulation code-Casino.

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扫描透射电子显微镜是透射电子显微镜的一种,近几年随着球差校正器的问世,扫描透射电子显微镜的分辨率达到亚埃级,结合能量分辨率为亚电子伏特的电子能量损失谱,可以对材料进行高空间分辨率及高能量分辨率的微结构和成分分析。文章简述了扫描透射电子显微镜的发展历程和工作原理,重点讲述了高角环形暗场像的成像机理以及基于高角环形暗场像对材料结构和成分进行分析的原理和应用;电子能量损失谱的成谱过程、谱的特征及其在材料化学和电子结构分析方面的优势和主要应用。
The scanning transmission electron microscope (STEM) is one kind of trans-mission electron microscope. With the invention of the spherical aberration corrector, the resolu-tion of STEM can reach sub-?ngstrom levels. High spatial resolution imaging and high energy resolution spectroscopy can be achieved simultaneously through the combination of STEM and electron energy loss spectroscopy (EELS). The fundamentals and application of STEM will be briefly introduced, with emphasis on the basics of high angle annular dark field imaging and its application in microstructural and chemical analyses. The characteristic features of EELS and its application in material science will also be discussed.

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采用脉冲电沉积方法制备出高致密、高质量的纳米晶Ni,并对其密度、组织成分和微观结构进行了表征.利用高能粒子加速器产生的1 MeV高能电子为辐照源,研究高能电子在纳米晶Ni和常规粗晶Ni中的能量损失.通过辐照过程中放置的吸收剂量片来准确表征其电子能量沉积.结果表明,晶粒尺寸对高能电子在材料中的能量沉积有明显的影响,1 MeV电子在穿过一定厚度的金属Ni后,在晶粒尺寸细小的纳米晶Ni中测得总的吸收剂量较大,证明了高能电子在纳米材料中的总能量沉积较小,从而表现出纳米材料抗辐照的优异性能.
The high performance nano-crystal Ni material was prepared by the pulse electrodeposition process;the intensity, composition and the microscopic structure of the nano-crystal Ni material were investigated by various measurements. In this paper, the 1 MeV electron was chosen as the irradiation source to investigate the energy loss of high energy electron in the nano-crystal Ni material and conventional bulk Ni material, and the energy deposition process during the electron irradiation was measured by the absorbed dose tablets. The results show that the grain size affects the energy loss process during the 1MeV electron irradiation seriously. The absorbed dose of 1 MeV electron in the nano-crystal Ni material is lower than that in the common Ni material with the same thickness, which indicates that the energy deposition of high energy electron in nano-crystal metal is lower than that in the conventional bulk metal, and the nano-crystal metal has an advantage of radiation resistance.

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利用基于密度泛函理论的第一性原理方法对黑索金晶体的电子结构和光学性质进行了计算.结果表明:黑索金是能隙值为3.43 eV的绝缘体,价带主要由C, N和O的2s与2p态构成,而导带主要由N-2p和O-2p态构成;静态介电函数ε1(0)=1.38,介电常数的虚部有5个峰值,其中最大峰值在光子能量4.59 eV处,并对造成这些峰值的可能的电子跃迁做了详细分析.利用能带结构和态密度分析了黑索金的光反射系数、吸收系数及能量损失函数等光学性质,发现黑索金是对光吸收、反射及能量损失不敏感的材料.
Electronic structure and optical properties of RDX are calculated by the first-principle density function theory pseudopotential method. The calculated results show that RDX is an insulator with a band gap of 3.43 eV, that the valence band of RDX is mainly composed of C-2s, C-2p, N-2s, N-2p and O-2s, O-2p, and that the conduction bands are mainly composed of N-2p and O-2p. The static dielectric functionε1 (0) is 1.38, the imaginary part of dielectric function has five peaks and the largest peak is at the position corresponding to 4.6 eV of photon energy. The electronic direct transitions for these peaks are analyzed in detail. The absorption, reflectivity and loss function of RDX are analyzed in terms of calculated band structure and density of states. The results indicate that the RDX is not sensitive to the optical absorption nor to reflectivity nor to energy loss.

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采用线性化量子流体动力学模型,研究了带电粒子平行于二维电子气平面运动时集体激发情况,得出相互作用过程中电子气流体的速度场矢量、入射粒子所受的阻止力、侧向力和自能的表达式.结果表明,当入射粒子在二维电子气附近运动时,电子气流体内产生V型振荡的尾流并以纵波的形式向入射粒子运动的反方向传播.此外,电子气流体内的摩擦力对入射粒子的能量损失等在不同速度区域内会产生一定的影响.
The collective excitations of electrons induced by an external incident charged particle moving parallel to a Two-Dimensional Electron Gases(2DEG)is investigated by using linearized quantum hydrodynamic(QHD)theory. General expressions of the velocity vector of perturbed electron gases and the stopping force,lateral force,self-energy of the charged particle are derived. The result shows that a V-shape oscillatory wake occurs to the elctron gases and propagates opposite to the direction of particle motion in compressional wave when the particle moved closed to the electron gases plane. Further,the frictional force in electron gases will influnce the energy force,lateral force and self-energy in lower and higher speed in some degree.

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卤素氟化物是一类反应活性很强的物质,在诸多领域中有重要作用。利用高分辨快电子能量损失谱仪,采用高分辨的dipole(e,e)方法可对卤素氟化物的分子荧光光谱振子强度进行了分析,其避免了光学测量过程中存在的精度低、效率低的缺陷。在21~26 e V的能量损失区域中,检测获取卤素氟化物卤素氟化物分子荧光光谱的11S→n1P跃迁以及电离过程的光学振子强度谱,并在59~67 e V和69~74 e V的能量损失区域中,分析卤素氟化物分子荧光光谱的自电离共振过程的光学振子强度谱,实验将得到的结果同前人研究成果进行对比分析,实验结果说明所提方法获取的卤素氟化物分子荧光光谱的振子强度,同前人研究结果具有较高的匹配度,具有较高的应用价值。
Fluoride is a kind of reactive halogen material, plays an important role in many fields. Using high resolution fast electron energy loss spectrometer, USES the high resolution of dipole (e, e) method for halogen fluoride molecule fluorescence spectrum oscillator strength are analyzed, and it avoids the existing in the process of optical measurement of the defects of low precision and low efficiency. In 21~26 ev energy loss in the area of detection for halogen halogen fluoride fluoride molecule fluorescence spectrum of optical oscillator strength of the process of transition and ionization spectrometry, and 59 ~67 ev and 69 ~ 67 ev energy loss in the area, the analysis of fluoride halide molecule fluorescence spectrum of optical oscillator strength of the process of autoionization resonance spectrum, the experiment will receive the results with previous research results, this paper compares and analyzes the experimental results show that the proposed method to obtain the fluor

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介绍了基于透射电子显微镜和扫描透射电子显微镜的电子断层扫描技术在材料科学领域的最新进展。详细地描述各种电子断层扫描的类型:基于透射电子显微镜的断层扫描技术包括明场断层扫描、暗场断层扫描、弱束暗场断层扫描、环形暗场断层扫描和能量过滤断层扫描;基于扫描透射电子显微镜的断层扫描技术包括高角环形暗场断层扫描、环形暗场断层扫描,非共格明场断层扫描、电子能量损失谱断层扫描和X射线能谱断层扫描。报道了优化的倾转系列,比如双轴倾转、同轴倾转、锥形倾转以及等斜率倾转等。总结了先进的重构算法包括离散迭代重构技术、压缩传感算法以及等斜率算法。最后,提出了电子断层扫描技术在材料科学中的发展趋势。
The recent developments of electron tomography (ET) based on transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in the field of materials science were introduced. The various types of ET based on TEM as well as STEM were described in detail, which included bright-field (BF)-TEM tomography, dark-field (DF)-TEM tomography, weak-beam dark-field (WBDF)-TEM tomography, annular dark-field (ADF)-TEM tomography, energy-filtered transmission electron microscopy (EFTEM) tomography, high-angle annular dark-field (HAADF)-STEM tomography, ADF-STEM tomography, incoherent bright field (IBF)-STEM tomography, electron energy loss spectroscopy (EELS)-STEM tomography and X-ray energy dispersive spectrometry (XEDS)-STEM tomography, and so on. The optimized tilt series such as dual-axis tilt tomography, on-axis tilt tomography, conical tilt tomography and equally-sloped tomography (EST) were reported. The advanced reconstruction algorithms, such as discret
文章简要介绍了材料科学研究中被广泛应用的透射电子显微(TEM)技术及其在多铁材料研究中的应用,并给出了几个典型案例:利用球差矫正原子分辨扫描透射电子显微术(STEM),并和电子能量损失谱(EELS)相结合,分析多铁异质结界面处的原子分布、离子价态和化学键的变化;结合球差矫正原子分辨透射电子显微图像(HRTEM)和STEM图像,分析多铁材料中的局域对称性破缺和电极化特性;利用原位变温及电/磁场加载技术,研究多铁材料中的结构相变和电畴/磁畴的动态演变特性。文章特别指出,现代透射电子显微学是全面分析理解多铁材料局域微结构,探讨多铁耦合机制及其物理根源的有效手段。
Recent progress of a variety of modern transmission electron microscopy (TEM) techniques and their applications to multiferroic materials are briefly reviewed. It is empha-sized that numerous significant structural issues in multiferroic material science could be well ad-dressed by means of TEM-based techniques. For instance, atomic-resolution scanning transmis-sion electron microscopy (STEM) and electron energy-loss spectroscopy (EELS) are invaluable for determining the atomic structure, valence states and electronic structure of the controllable in-terface in multiferroic heterostructures. High-quality high-resolution TEM and STEM images with spatial resolution better than 1 ? ensure the direct observation of local dipoles and mapping of the polarization field. The new generation TEM facilities combined with in-situ cooling/heating and electric/magnetic field holders allow us to capture the dynamic characteristics of the atomic struc-ture and ferroelectric/magnetic domains and to und

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采用基于密度泛函理论的第一性原理平面波超软赝势法,对Ag掺杂AlN 32原子超晶胞体系进行几何结构优化,计算并分析体系的电子结构、磁性和光学性质.结果表明:Ag掺杂后,Ag4d态电子与其近邻的N2p态电子发生杂化,引入杂质带形成受主能级,实现p型掺杂,使体系的导电能力增强,同时表现出金属性和弱磁性,其净磁矩为1.38μв.掺杂形成的N-Ag键电荷集居数较小,表现出强的离子键性质.掺杂后体系的介电函数虚部和光吸收谱在低能区出现新的峰值,同时复折射率函数在低能区发生变化,吸收边向低能方向延展,体系对长波吸收加强,能量损失明显减小.
Geometrical structure of Ag doped 32-atom super-cell of AlN was optimized with first principle density functional theory based on full potential linearized augumented plane wave method. Electronic structures, magnetic and optical properties were calculated and discussed in detail. It shows that Ag doping makes Ag4d electrons hybrid with its nearest neighbor N2p electrons, which introduces impurity bands to form acceptor energy level and realizes p-type doping. The system enhances its conductivity and shows metallic and weak magnetism. Its net magnetic moment is 1?38μв. Mulliken charge population of N-Ag bonds through Ag doping is small and bonds show strong ionic bonding properties. Imaginary part of dielectric function and optical absorption spectrum of the doping system show a new peak in low energy region. Complex refractive index function changes in low energy region. And absorption edge extends to low energy. Doping system enhances long-wave absorption and energy loss

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