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双语推荐：Schottky

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制备了Pt/CdS Schottky紫外探测器，对Pt/CdS Schottky紫外芯片对中波红外（3～5μm）的透过率进行了研究，并对器件光电性能进行了测试分析。通过优化 Pt 电极制备条件及对 SiO2增透膜的研究，使Pt/CdS Schottky紫外芯片对中波红外波段的透过率达到85%。室温300 K下，所制备Pt/CdS Schottky紫外探测器在零偏压处的背景光电流为-0.063 nA，在＋6 V时的暗电流密度为7.6×10^-7 A/cm^2，R0A达到7.2×10^4Ω·cm^2，其50%截止波长为510 nm。
Pt/CdS Schottky UV detector was prepared successfully, the mid-wavelength(3-5 μm) transmits property of Pt/CdS Schottky chip was researched, and the photoelectric characteristics of the detector were studied. The transmittance of the chip was 85%by the grown condition of Pt electrode and the anti-reflection effect of SiO2 deposited layer being optimized. The photo response spectra of the Pt/CdS Schottky diode was tested at room temperature and its zero bias current is -0.063 nA, the dark current density is 7.6×10-7 A/cm2 at a reverse bias of -6 V, and the dynamic impedance value of R0A=7.2×104?·cm2, the 50%cutoff wavelength is 510 nm.

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对混合PiN/Schottky二极管(MPS)进行研究,首先对MPS二极管的工作原理进行了分析,通过对MPS二极管、肖特基二极管、PIN二极管的伏安特性进行模拟,结果表明MPS二极管正向压降小,电流密度大,反向漏电流小,是一种具有肖特基正向特性和PN结反向特性的新型整流器.可以通过改变肖特基和PN结的面积比来调整MPS二极管的性能,与肖特基二极管和PIN二极管相比具有明显的优势,是功率系统不可或缺的功率整流管。
The main purpose of this paper is to study the merged PiN/Schottky diode (MPS).Firstly,the MPS diode operating principle is analyzed ,Though the volt-ampere characteristics of merged PiN/Schottky diode (MPS)、Schottky diode、PiN diode were simulated,the results show that the MPS diode forward voltage drop is small,current density is big,reverse leakage is small,is a kind of Schottky forward characteristics and PN junction reverse characteristics of the new rectifier. By changing Schottky and PN junction area ratio to adjust the performance of MPS diode,compared with Schottky diode and PiN diode has obvious advantages,is an indispensable power rectifier of power system.

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介绍了结势垒控制肖特基整流管（Junction -Barrier-controlled Schottky-Rectifier， JBS）的结构原理，论述了JBS结构肖特基整流器的正向特性和反向特性，通过对扩散掩膜尺寸m和扩散P＋区时窗口宽度S的工艺模拟，归纳出m、s变化对器件参数正向压降和反向漏电流密度的影响。并通过实际产品进行验证，得出JBS结构肖特基整流器漏电流小的特点，利于功率肖特基二极管得到更广泛的应用。
This paper introduces the structure principle of Junction-Barrier-controlled Schottky-Rectifier(JBS)and discusses the forward and reverse characteristics of schottky rectifier in JBS structure. By process simulation for diffusion mask size (m)and p+zone window width (s),the effects on the forward voltage drop and reverse leakage current density,performed by the change of m and s device parameter,are described.The product is verified that the characteristics of schottky rectifier in JBS structure with low current leakage are concluded,so the power SBD can be used widely.

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目的研究黄铜在不同阳极钝化电位下形成的钝化膜的半导体性能。方法通过动电位极化曲线获取黄铜在硼酸盐缓冲溶液中的维钝电位区间,并选取3个钝化电位值对黄铜进行钝化处理,采用电化学阻抗谱和Mott-Schottky半导体理论研究阳极钝化电位对钝化膜半导体性能的影响,并进一步利用PDM模型进行点缺陷扩散系数的计算。结果黄铜在硼酸盐缓冲溶液中有明显的钝化区间,不同钝化电位对应的Mott-Schottky直线斜率均为负值,且点缺陷扩散系数均为10-14数量级。随着阳极钝化电位的正移,钝化膜的阻抗值不断增加,受主密度降低,平带电位变小,空间电荷层厚度增加。结论黄铜在不同钝化电位下形成的钝化膜均表现出p型半导体的特性,膜中载流子以空穴为主,随着阳极钝化电位的正移,钝化膜的导电性能变差,耐蚀性能增强,对基体的保护作用更好。
Objective To investigate the semi-conducting property of passive films formed on brass under different passivation potential. Methods The passivation range of brass in borate buffer solution was obtained by potentiodynamic polarization curves, and three passivation potentials were chosen. The electrochemical impedance spectroscopy and Mott-Schottky theory were used,and the diffusion coefficient of passive film was calculated using PDM. Results The brass showed obvious passivation state in borate buffer solution. The Mott-Schottky plots were linear with a negative slop. With the passivation potential moving towards positive, the film impedance increased, the acceptor density and the flat potential decreased, the space charge layer thickness increased, and the order of magnitude of point defect diffusion coefficient was 10-14 . Conclusion Under different passivation potential, the passive films on the brass surface showed the property of p-type semiconductor, the majority of the carriers

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800合金作为核电站蒸汽发生器的一种关键材料,服役环境下其表面钝化膜的特性一直是人们研究的热点.本文用Mott-Schottky方法研究了800合金在不同硫酸根离子和氯离子浓度比的溶液中钝化膜的半导体特性,并结合电化学阻抗谱(EIS)、扫描电镜(SEM)、扫描电化学显微镜(SECM)研究了钝化膜的耐蚀性和表面活性.Mott-Schottky结果表明,800合金表面钝化膜的半导体特性与溶液中硫酸根、氯离子的浓度比有关,随硫酸根与氯离子浓度比的降低,半导体特性发生转变.当硫酸根与氯离子的浓度比较高时,钝化膜为p型半导体;而当硫酸根与氯离子的浓度比较低时,钝化膜为n型半导体.EIS、SECM、SEM结果表明,随浓度比的降低钝化膜由过钝化溶解转为明显的点蚀特征,钝化膜表面活性增加.钝化膜特性的改变与其半导体类型的转变密切相关,而半导体特性的转变由氯离子、硫酸根离子在800合金钝化膜表面的竞争吸附所致,其在表面的竞争吸附直接影响钝化膜表面发生的化学反应,改变电极/溶液界面电势差,使钝化膜中的空位类型改变,最终决定半导体类型.
Al oy 800 is an important steam generator material used in nuclear power plants, and so there is significant interest in the properties of passive films of this alloy under service conditions. In this work, the semiconductivity of Al oy 800 in sulfate and chloride solutions was investigated using Mott-Schottky analysis, electrochemistry impedance spectroscopy (EIS), scanning electron microscopy (SEM), and scanning electrochemical microscopy (SECM). The Mott-Schottky results show that the semiconductivity is affected by the sulfate to chloride concentration ratio;p-type semiconductivity is exhibited at high concentration ratios but transitions to n-type when the concentration ratio is low. EIS, SEM, and SECM results indicate that the degradation form of the passive film changes from transpassive dissolution to pitting as the concentration ratio decreases while the film′s surface reactivity increases, an effect that is related to the semiconductivityconversion. The observed variation in

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随着对电子产品节能环保要求的提高,对广泛应用于电子产品的肖特基二极管电学性能的要求也越来越高.含金属-氧化物-半导体结构的沟槽式肖特基二极管(trench barrier Schottky diodes,TMBS)由于其优异的性能而备受青睐.沟槽结构对提高肖特基二极管性能起着至关重要的作用,但是关于沟槽形状对二极管电学性能的影响尚未见有深入的研究报道.本文提出了两种新型的沟槽结构——圆角沟槽和阶梯型沟槽.通过模拟研究发现,圆角沟槽与传统的直角沟槽TMBS器件相比,在维持同样的漏电流和正向导通电压的条件下,击穿电压可以提高15.8%.阶梯沟槽与传统直角沟槽TMBS器件相比,可以在击穿电压不减小的情况下,漏电降低35%,正向导通电压仅略有增加.这归结于圆角沟槽和阶梯沟槽对有源区内部电场强度分布的调节.
With the globally enhancing demand for the energy saving and environmental protection of electronic products, the requirement for Schottky diode which is widely used in electronic products becomes higher and higher. The trench metal-oxide-semiconductor barrier Schottky (TMBS) diode is more and more favored because of its excellent performance. The shape of the trench plays an important role in determining the electrical properties of the Schottky diode. However, there is no intensive study on this point. In this study, we propose two novel trench structures, i. e., filleted corner trench and ladder trench. By performing the simulation with Medici, it is found that compared with the traditional trench TMBS diode, the filleted corner trench TMBS diode has a breakdown voltage with 15.8% increase under the conditions of the same leakage current and the forward turn-on voltage. Also, the ladder trench TMBS diode can reduce the leakage current by 35%, while have a breakdown voltage not small

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研究了基于简单Fe/SiO2/p-Si结构的2个拼接Schottky二极管的巨磁阻效应。该巨磁阻效应只在光辐照非平衡条件下才显现，且磁阻率可达到100以上。该磁阻效应对经过器件的偏流大小与方向以及磁场极性具有高度依赖性。更重要的是巨磁阻效应只在当子系统中少量电荷载子转移至非平衡状态下时才显现。这种磁敏感装置可为半导体器件开辟一个新的发展方向提供参考。
The giant magnetoresistive (MR) effect was investigated in a simple Fe/SiO2/p-Si-hybrid-structure-based device from two back-to-back Schottky diodes. The effect was revealed only under the non-equilibrium conditions caused by optical radiation. It is demonstrated that the magnetoresistance ratio attains 100 or more. The main peculiarity of the MR behavior is its strong dependence on the magnitude and the sign of the bias current across the device and, most surprisingly, upon polarity of the magnetic field. It is important that the magnetoresistive effect is implemented exclusively in the subsystem of minority charge carriers transferred to the non-equilibrium states. The development of magneto-sensitive devices of this type can give grounds for a novel direction of semiconductor spintronics.

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利用等通道转角挤压方法制备块体超细晶Fe—Ni—Cr合金,对其在0.25 mol/L Na2SO4＋0.05 mol/L H2SO4溶液中的耐蚀性进行研究。与粗晶合金相比,超细晶合金表现出加速的活性溶解过程,钝化区间缩小,维钝电流密度更大。对表面钝化膜进行Mott-Schottky曲线测试并结合点缺陷模型分析,结果表明,超细晶合金钝化膜内载流子的扩散系数较粗晶合金显著提高一个数量级,载流子密度略有降低。
The corrosion behavior of bulk ultra-fine grained (UFG) Fe-Ni-Cr alloy prepared by equal-channel angular pressing technique was investigated in 0.25 mol/L Na2SO4+0.05 mol/L H2SO4 solution by electrochemical measurements. As compared to the coarse grained (CG) counterpart, the UFG alloy exhibits an acceleration of the active dissolution and a shrunk passive region with a higher passive current. The Mott-Schottky analysis in conjunction with the point defect model indicates that the donor diffusion coefficient in the passive films of the UFG sample increases greatly to one magnitude order higher and the donor density is slightly lower than that of the CG sample.

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太赫兹肖特基二极管是太赫兹应用领域中非常重要的一种器件,它可以实现高频信号的混频和倍频,研制发展太赫兹肖特基二极管对于太赫兹技术有重要意义。本文首先介绍了太赫兹肖特基二极管的种类及性能表征,接着介绍国内外主要研究机构在太赫兹肖特基二极管方面的研制成果和进展,最后总结出研制太赫兹肖特基二极管的关键技术和发展方向。
Terahertz Schottky diode is a very important device in terahertz application, which can be used to mix or multiply high frequency signals. The development of terahertz Schottky diode shows an important significance for the terahertz technology. The species and characteristics of terahertz Schottky diodes are introduced. The research results and progress in research institutions at home and abroad are described from the terahertz Schottky diode aspects. The key technologies and development trends of terahertz Schottky diode are summarized.

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本利用电容测量方法结合Mott-Schottky分析,研究了不锈钢在硫酸溶液中所形成钝化膜的半导体性质,同时对成膜电位、成膜时间以及溶液pH值对膜半导体性能的影响也做了分析。结果表明:不锈钢钝化膜具有p型-n型-p型半导体特性,膜内的杂质浓度随成膜电位的增加而增加,随极化时间的延长而减小,这主要是由于极化电位和极化时间的变化引起了膜组成的变化所引起的。溶液PH值的改变可以显著影响0.16V~0.74V电位扫描区间内膜的平带电位EFB。溶液PH值与平带电位呈线性关系,斜率为58.58mV/pH。
The semiconductor properties of passive film formed on 304L stainless steel in sulfuric acid solution were investigated by capacitance measurement based on Mott-Schottky analysis, and the effects of film formation potential, formation time and pH value of electrolyte on the semiconductor properties of the passive film were also discussed. The results revealed an p-n-p type semiconductor characteristic of passive film on stainless steel, the impurity concentration of the passive film increased with the formation potential changing to positive, and decreased with prolonging the polarization time, this can be illustrated by the changing of the composition of the passive film formed on different formation potentials and polarization time. The pH values of the electrolyte can significantly affect the flat band potential, EFB, and a linear relationship of PH and EFB can be obtained with a 58.58mV/pH unit slope.

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