提出了铁氧体薄膜器件光刻多次涂胶新工艺,研究了涂覆次数对光刻胶的表面粗糙度、均匀性和厚度的影响。同时结合培烘试验,对一种实际电路基片进行了验证。试验结果表明:随着光刻胶涂覆次数的增加,光刻胶厚度逐渐增大,增加幅度逐渐减小,涂覆光刻胶的表面粗糙度有明显改善,均匀性也逐渐提高。当烘焙温度为50℃、烘焙时间为25min,光刻胶与基底的附着力、感光性和耐腐蚀性均能满足铁氧体器件薄膜电路制作工艺的要求。利用多次涂胶法可有效去除电路手工修补工艺,从而提高铁氧体薄膜器件的电路图形加工质量及效率。

Multiple spin-coating technology was proposed for ferrite film device lithograph, and influence of coating times on the surface rougnness, uniformity and thickness of photo-resist was investigated. At the same time, baking test was conducted on a practical circuit substrate. The experimental results show that, with increasing the number of coating photo-resist, the thickness of photo-resist increases, with a decreased increase amplitude, and both surface roughness and uniformity of photo-resist is improved obviously. When baking at 50℃for 25min, photo-resist adherence to the substrate, photo-sensitivity, and corrosion-resistance of the photo-resist can meet the requirements of thin film circuit production process of ferrite devices. The use of multiple coating can omit circuit manual repairing, resultantly improving the quality and efficiency of the circuit graphics processing of ferrite thin film devices.

光刻是利用光化学反应将临时电路图形从掩膜版转移到光刻胶膜上的工艺。影响光刻质量的因素包含光源、掩膜版与光刻胶三部分。其中,掩膜版与光源（光刻机）在日常生产中视为固定不变的因素。相比较而言,光刻胶受曝光条件、显影条件、烘干条件等诸多因素的影响,其性质会有明显变化。本文就光刻胶膜的陡直度（以下简称＂陡直度＂）进行了一系列研究和实验,其最终目的是找到现有条件下提高光刻线条陡直度的方法。

Lithography is a process which uses photochemical reaction to transfer temporary circuit pattern from mask to PR film. The factors that affect the quality of lithography include the UV source, mask and PR. . Among the factors, we treat the mask and the UV source ( aligner) as steady conditions. Only the PR, compared with the other factors, its features can be influenced by changing the pa-rameters of exposure, development, or baking conditions. This paper makes a series of research and experiment for the steepness of PR film in order to find some methods for increasing the steepness of PR film under the existing conditions.

采用经稀释的光刻胶在喷胶机上对打孔的基片进行了雾化喷涂试验,在通孔结构表面实现了光刻胶的均匀涂覆。在同一基片上选取了十个通孔,采用扫面电镜对基片表面、通孔边缘及通孔侧壁中部和底部四处的光刻胶厚度进行了测量,得到的平均膜厚分别为10.2、8.8、6.1和5.3μm,各处厚度均匀性均小于±10%。

The diluted photoresist was applied in spray coating process on drilled substrate using a spray coating equipm ent. The conform al coating of photoresist layer on through via structure was achieved. Ten through via on the sam e substrate were selected. For each through via,the photoresist layer thickness of substrate surface,through via edge,sidewall center and sidewall bottom were m easured respectively by H ITACHI Scanning E lectron Microscope. The average value of film thickness were 10.2,8.8,6.1 and 5.3μm ,and allthickness uniform ity was less than ±10% .

为了在锗晶体光坯上制作出满足要求的码盘图案，分别采用正性光刻胶和负性光刻胶，先镀膜后照相和先照相后镀膜的工艺路线进行工艺实验，并对实验结果进行分析，得出结论：用负性光刻胶按先照相后镀膜的工艺路线为锗晶体光码盘分划制作工艺的最佳方案。实验结果表明：加工出的图案明暗对比度大、边缘不均匀性小于0．008mm，可实际应用于锗晶体上分划图案的制作。

In order to process code disc pattern on the Ge crystal base met the needs ,we did the technological experiments ,through adopting the positive photoresist and negative photoresist , in the technological ways that coating before exposure and exposure before coating ,respective‐ly .We analyzed the measurement results ,and came to the conclusion that the optimum matc‐hing scheme of reticle pattern processing technology for Ge crystal optical encoder was adop‐ting the negative photoresist in accordance with the exposure before coating .Experimental re‐sults show that the finished graphic pattern has obvious contrast ,the asymmetry distribution of edge is lower than 0 .008 mm .It can be applied to the manufacture of the reticle pattern on Ge base .

通过对液晶显示器制造过程中的关键工序---光刻胶涂布工艺、原理进行分析，对光刻胶涂布设备参数进行调整等，为生产LCD提高合格率提供参考。

Based on the key working procedure in the process of LCD m anufacture -photoresist coating process, principle analysis, adjust photoresist coating equipm ent param eters etc, provide reference for production im prove the qualified rate of LCD .